排序方式: 共有42条查询结果,搜索用时 872 毫秒
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采用MOCVD技术在Al2O3(0001)衬底上生长了GaN薄膜,使用透射光谱、光致发光光谱和X射线双晶衍射三种技术测试了五类GaN薄膜样品,实验结果表明:GaN薄膜透射谱反映出的GaN质量与X射线双晶衍射测量的结果一致,即透射率越大,半高宽越小,结晶质量越好;而X射线双晶衍射峰半高宽最小的样品,其PL谱的带边峰却很弱,这说明PL谱反映样品的光学性能与X射线双晶衍射获得的结晶质量不存在简单的对应关系,同时还报导了一种特殊工艺生长的高阻GaN样品的RBS/沟道结果。 相似文献
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本文通过脉冲激光沉积法制备了不同厚度(80nm、320nm、1000nm和2000nm)的YBa2Cu3O7-δ(YBCO)超导薄膜,对它们的剩余应力和临界电流特性进行了对比研究.通过系列的激光显微Raman光谱和磁化曲线测量分别获得了薄膜剩余应力和磁化临界电流密度(Jc)对薄膜厚度的依赖关系.结果显示超导薄膜内剩余应力越小,Jc越高.对于中等厚度的薄膜样品(320nm和1000nm),其膜内剩余应力较小,同时由其特征的磁通匹配场大小推知在该厚度范围内的样品具有较高的线性缺陷密度,从而显示出较高的Jc值. 相似文献
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通过三氟乙酸盐-金属有机沉积(TFA-MOD)方法在LaAlO3单晶基片上制备了YBa2Cu3O7-δ(YBCO)高温超导薄膜,并测定在垂直于a-b面的外加交变磁场下薄膜样品的交流磁化率随温度的变化关系,在频率543.2 Hz、振幅1 V条件下,样品的超导转变发生在91 K附近.交流磁化率虚部峰值温度Tp随着磁场振幅的变大而向低温区移动,随着频率的增大而向高温区移动,这些现象与磁通蠕动模型相一致,峰值温度TP与外交变磁场的振幅Hac满足Hcaε(1-Tp/Tct)n的关系,其n~1.55;而与频率之间满足1/Tp与lnf的线性关系,可能是由于TAF-MOD薄膜样品中较多孔洞和非位错缺陷的出现使其偏离一般物理气相沉积薄膜样品具有的SNS型连接(n~2).根据频率f与温度T的Arrhenius公式以及二维简约的Bean模型,得到当前薄膜样品的激活能U与电流密度J、以及J与温度T的标度关系. 相似文献
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Shu-li He Hong-wei Zhang Chuan-bing Rong Ren-jie Chen Ji-rong Sun Bao-gen Shen 《Journal of magnetism and magnetic materials》2007
The single-phase nanocrystalline FePt magnets composed of 343 irregular-shaped grains are built. The demagnetization curves are simulated by micromagnetic finite element method. The remanence, coercivity and maximum energy product of the magnets decrease with deteriorating grain alignment. The characteristics of variation of magnetic properties with the degree of orientation are closely related to the average grain size of nanocrystalline magnets. The contribution of intergrain exchange coupling (IGEC) to remanence enhancement is associated to the degree of orientation, and decreases with improved grain alignment. With decreasing grain size, coercivity increases for anisotropic nanocrystalline magnets, which is completely different from that of isotropic nanocrystalline magnets. 相似文献
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Chuan-bing Rong Hong-wei ZhangJi-rong Sun Bao-gen Shen 《Journal of magnetism and magnetic materials》2006
The effects of geometry and material parameters on the extraordinary magnetoresistance (EMR) of the rectangular semiconductor–metal hybrid structure have been studied systematically using the finite-element method (FEM). We find that the EMR depends sensitively on the placement of the voltage probes and explain the origin of the EMR enhancement in the asymmetric voltage probe configuration. The width of the metal is important for the EMR effect as well as the width of the semiconductor. The low-field EMR shows an approximate quadratic with the mobility of semiconductor, while the high-field EMR gradually saturates with the increase of mobility due to the little change of hall angle. To obtain significant EMR effect, the ration of conductivity of metal and semiconductor should be larger than 104. 相似文献
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研究了Cu60-Ni40wt%(简称Cu60)和CudO-Ni60wt%(简称Cu4O)两种不同组分的铜镍合金基带在不同温度下退火织构的形成过程,其中名义组分为Cu60-Ni40wt%的合金在650~1000℃退火一小时可获得良好的(001)织构.半高宽随着退火温度的升高而下降.1000~C退火后φ扫描的半高宽(FWHM)为5.5°,ω扫描的半高宽为6.1°.组分为Cu60-Ni40wt%的合金1150℃退火仍不能形成良好的织构.对于Cu40居其里温度点在室温以上,饱和磁矩大于Ni-at.%5W;而Cu60的居里温度点在20K,在77K下表现顺磁性质,其饱和磁矩仅为Ni-at.%5W基带的10%.在77K下Cu60的电阻为7.5×10-9Ω·m,比Ni-at.%5W的电阻要低的多. 相似文献